The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 14, 2020
Filed:
May. 21, 2018
Applicant:
Qualcomm Incorporated, San Diego, CA (US);
Inventors:
Assignee:
QUALCOMM Incorporated, San Diego, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/737 (2006.01); H01L 29/08 (2006.01); H01L 29/423 (2006.01); H01L 23/528 (2006.01); H01L 23/532 (2006.01); H01L 21/768 (2006.01); H01L 29/417 (2006.01); H01L 23/482 (2006.01); H01L 29/66 (2006.01); H01L 29/20 (2006.01); H01L 29/06 (2006.01); H01L 21/311 (2006.01); H01L 21/3105 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7371 (2013.01); H01L 21/76885 (2013.01); H01L 23/482 (2013.01); H01L 23/528 (2013.01); H01L 23/53295 (2013.01); H01L 29/0653 (2013.01); H01L 29/0817 (2013.01); H01L 29/0821 (2013.01); H01L 29/20 (2013.01); H01L 29/41708 (2013.01); H01L 29/42304 (2013.01); H01L 29/66242 (2013.01); H01L 21/31058 (2013.01); H01L 21/31138 (2013.01);
Abstract
A heterojunction bipolar transistor (HBT) may include a base contact and emitter mesas on a collector mesa. The HBT may include emitter contacts on the emitter mesas. The HBT may include a first dielectric layer on the collector mesa, sidewalls of the emitter mesas, and the base contact. The HBT may further include a second dielectric layer on the first dielectric layer and on sidewalls of the emitter contacts. The HBT may further include a secondary conductive layer on the first dielectric layer, the second dielectric layer, and the emitter contacts.