The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 06, 2022
Filed:
Feb. 27, 2020
Applicant:
Qualcomm Incorporated, San Diego, CA (US);
Inventors:
Assignee:
QUALCOMM Incorporated, San Diego, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/12 (2021.01); H01S 5/02 (2006.01); H01S 5/026 (2006.01); H01S 5/343 (2006.01); H01S 5/042 (2006.01); H01S 5/34 (2006.01);
U.S. Cl.
CPC ...
H01S 5/12 (2013.01); H01S 5/021 (2013.01); H01S 5/026 (2013.01); H01S 5/0207 (2013.01); H01S 5/0208 (2013.01); H01S 5/0218 (2013.01); H01S 5/0261 (2013.01); H01S 5/3432 (2013.01); H01S 5/34306 (2013.01); H01S 5/04257 (2019.08); H01S 5/3412 (2013.01);
Abstract
A distributed feedback (DFB) laser that includes a substrate comprising a first surface and a second surface, wherein the substrate comprises silicon; a plurality of shallow trench isolations (STIs) located over the second surface of the substrate; a grating region located over the plurality of STIs and the substrate, wherein the grating region comprises a III-V semiconductor material; a non-intentional doping (NID) region located over the grating region; and a contact region located over the NID region.