The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 05, 2021
Filed:
Jul. 15, 2019
Applicant:
Qualcomm Incorporated, San Diego, CA (US);
Inventors:
Assignee:
QUALCOMM Incorporated, San Diego, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/06 (2006.01); H01L 29/93 (2006.01); H01L 29/778 (2006.01); H01L 29/20 (2006.01); H01L 29/205 (2006.01); H03F 3/195 (2006.01); H01L 29/66 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0629 (2013.01); H01L 21/0254 (2013.01); H01L 27/0605 (2013.01); H01L 29/2003 (2013.01); H01L 29/205 (2013.01); H01L 29/66174 (2013.01); H01L 29/66196 (2013.01); H01L 29/66462 (2013.01); H01L 29/7786 (2013.01); H01L 29/93 (2013.01); H03F 3/195 (2013.01); H03F 2200/297 (2013.01); H03F 2200/451 (2013.01);
Abstract
Aspects generally relate to a PN junction varactor that can be integrated with high electron mobility transistor (HEMT) in a single device or die. The varactor and HEMT are fabricated with different materials forming various layers of the varactor and HEMT. Using different material stack-up to form the varactor and HEMT allows characteristics of the varactor and HEMT to be varied for improved performance in different operating scenarios. The integrated varactor and HEMT device may be used for RF circuits, such as radio frequency front end (RFFE) devices for use in 5G.