The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 15, 2020
Filed:
Aug. 29, 2018
Qualcomm Incorporated, San Diego, CA (US);
QUALCOMM Incorporated, SanDiego, CA (US);
Abstract
Low resistance source/drain regions in III-V transistors are disclosed. More particularly, a source and a drain are formed from heavily doped III-V materials that have lower resistances than a barrier layer and/or a cap layer under the drain. In an exemplary aspect, the barrier and cap layers are formed over a mobility channel layer and then etched to form source and drain recesses. A source and a drain are then epitaxially grown in the recesses. The source and the drain may include one or more layers, with the top layer having the lowest bandgap, thus helping to lower contact resistance. By lowering the resistance of the source and the drain, the overall resistance of the transistor may be lowered to allow for operation at higher frequencies.