The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 17, 2019

Filed:

Sep. 21, 2018
Applicant:

Iqe Plc, St. Mellons, Cardiff, GB;

Inventors:

Rytis Dargis, Oak Ridge, NC (US);

Richard Hammond, Newport, GB;

Andrew Clark, Mountain View, CA (US);

Rodney Pelzel, Emmaus, PA (US);

Assignee:

IQE plc, St. Mellons, Cardiff, GB;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/06 (2006.01); H01L 29/737 (2006.01); H01L 29/51 (2006.01); H01L 41/047 (2006.01); H01L 21/285 (2006.01); H01L 29/45 (2006.01);
U.S. Cl.
CPC ...
H01L 29/517 (2013.01); H01L 21/28556 (2013.01); H01L 21/28575 (2013.01); H01L 29/452 (2013.01); H01L 29/456 (2013.01); H01L 29/518 (2013.01); H01L 41/0477 (2013.01);
Abstract

The structures and methods disclosed herein include changing composition of a metal alloy layer in an epitaxial electrode material to achieve tunable work functions for the electrode. In one example, the tunable work function is achieved using a layered structure, in which a crystalline rare earth oxide (REO) layer is epitaxially over a substrate or semiconductor, and a metal layer is over the crystalline REO layer. A semiconductor layer is thus in turn epitaxially grown over the metal layer, with a metal alloy layer over the semiconductor layer such that the ratio of constituents in the metal alloy is used to tune the work function of the metal layer.


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