The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 07, 2022
Filed:
Jan. 14, 2020
Applicant:
Iqe Plc, Cardiff, GB;
Inventors:
Richard Hammond, Newport, GB;
Drew Nelson, Vale of Glamorgan, GB;
Alan Gott, Bristol, GB;
Rodney Pelzel, Emmaus, PA (US);
Andrew Clark, Mountain View, CA (US);
Assignee:
IQE plc, Cardiff, GB;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/306 (2006.01); H01L 21/3063 (2006.01); H01L 23/66 (2006.01); H01L 29/04 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02381 (2013.01); H01L 21/02002 (2013.01); H01L 21/02203 (2013.01); H01L 21/02293 (2013.01); H01L 21/02505 (2013.01); H01L 21/306 (2013.01); H01L 21/3063 (2013.01); H01L 23/66 (2013.01); H01L 29/045 (2013.01); H01L 29/0607 (2013.01); H01L 21/02513 (2013.01);
Abstract
A layered structure for semiconductor application is described herein. The layered structure includes a starting material and a fully depleted porous layer formed over the starting material with high resistivity. In some embodiments, the layered structure further includes epitaxial layer grown over the fully depleted porous layer. Additionally, a process of making the layered structure including forming the fully depleted porous layer and epitaxial layer grown over the porous layer is described herein.