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Hsinchu, Taiwan

Liang-Gi Yao

USPTO Granted Patents = 79 (Patent Applications = 3)

Average Co-Inventor Count = 3.5

ph-index = 13

Forward Citations = 587(Granted Patents)

Forward Citations (Not Self Cited) = 555(Dec 10, 2025)

Inventors with similar research interests:

Location History:

Taipei, TW (1998 - 2006)
Hsing-Chu, TW (2003 - 2008)
Hsing-Ci, TW (2012)
Hsin-Chu, TW (2005 - 2016)
Shun Chu, TW (2018)
Shin-Chu, TW (2011 - 2020)

Company Filing History:

61 out of 40,780

Taiwan Semiconductor Manufacturing Comp. Ltd.

17 out of 1,093

Vanguard International Semiconductor Corporation

1 out of 832,843

Other

patents

Years Active: 1998-2020

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Areas of Expertise:

Semiconductor Fabrication

High-K Gate Dielectric

MOSFET Technology

Epitaxy Layer Formation

Interfacial Engineering

Chemical Vapor Deposition

Atomic Layer Deposition

Strained Silicon Layer

Fluorine Passivation

Gate Stack Optimization

Transistor Dielectrics

Polysilicon Gate Formation

79 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 10861751 - Method of semiconductor integrated circuit fabrication (2020-12-08),

2. 10483170 - Method of semiconductor integrated circuit fabrication (2019-11-19),

3. 10008418 - Method of semiconductor integrated circuit fabrication (2018-06-26),

4. 9922827 - Method of forming a semiconductor structure (2018-03-20),

5. 9893160 - Methods of forming gate dielectric material (2018-02-13),

6. 9385208 - Semiconductor device having high-K gate dielectric layer (2016-07-05),

7. 9362123 - Structure and method for integrated devices on different substartes with interfacial engineering (2016-06-07),

8. 9257349 - Method of scavenging impurities in forming a gate stack having an interfacial layer (2016-02-09),

9. 9245970 - Semiconductor structure having interfacial layer and high-k dielectric layer (2016-01-26),

10. 9194804 - Stress analysis of 3-D structures using tip-enhanced Raman scattering technology (2015-11-24),

11. 9040393 - Method of forming semiconductor structure (2015-05-26),

12. 9006056 - Method for reducing interfacial layer thickness for high-k and metal gate stack (2015-04-14),

13. 8987095 - Method of fabricating a carbon-free dielectric layer over a carbon-doped dielectric layer (2015-03-24),

14. 8785272 - Process to make high-K transistor dielectrics (2014-07-22),

15. 8766379 - Multi-layer scavenging metal gate stack for ultra-thin interfacial dielectric layer (2014-07-01),

Title: The Innovative Journey of Inventor Liang-Gi Yao

Introduction: Liang-Gi Yao, a pioneering inventor hailing from Hsinchu, Taiwan, has made significant contributions to the world of technology and innovation through his groundbreaking inventions.

Latest Patents: Liang-Gi Yao holds several patents in the field of semiconductor technology, including patents related to advanced chip design and manufacturing processes.

Career Highlights: With a career spanning over two decades, Liang-Gi Yao has worked tirelessly to push the boundaries of technological advancement. He has held key positions in leading tech companies, where he played a crucial role in developing cutting-edge solutions.

Collaborations: Throughout his career, Liang-Gi Yao has collaborated with top researchers, engineers, and industry experts to bring his innovative ideas to life. His collaborative efforts have led to the successful implementation of several groundbreaking technologies.

Conclusion: Liang-Gi Yao's passion for innovation and his relentless pursuit of excellence have established him as a prominent figure in the world of technology. His contributions continue to inspire future generations of inventors and shape the landscape of technological innovation.

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