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For the Inventor, By the Inventor

Hsinchu, Taiwan

Liang-Gi Yao

This inventor holds 79 USPTO granted patents and 4 published patent applications, primarily in Semiconductor Technology (CPC class H01L). Top assignees: Taiwan Semiconductor Manufacturing Comp. Ltd., Vanguard International Semiconductor Corporation, Other. Active years: 1998-2020.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Liang-Gi Yao. Retrieved from https://idiyas.com/inventor/liang-gi-yao

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 79 

% Patents Active = 62.0

Average Co-Inventor Count = 3.5

ph-index = 13

Forward Citations = 587(Granted Patents)

Forward Citations (Not Self Cited) = 555(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Taipei, TW (1998 - 2006)
  • Hsing-Chu, TW (2003 - 2008)
  • Hsing-Ci, TW (2012)
  • Hsin-Chu, TW (2005 - 2016)
  • Shun Chu, TW (2018)
  • Shin-Chu, TW (2011 - 2020)

Company Filing History:

goldMedal61 out of 42,810 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents
silverMedal17 out of 1,132 
 
Vanguard International Semiconductor Corporation
 patents
bronzeMedal1 out of 834,453 
Other
 patents

Years Active: 1998-2020

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Areas of Expertise:
Semiconductor Fabrication
High-K Dielectrics
Gate Stacks
Integrated Circuits
Epitaxy
Interfacial Engineering
MOSFET
Chemical Vapor Deposition
Atomic Layer Deposition
Silicon Germanium Substrate
Fluorine Passivation
Transistor Dielectrics
79 patents (USPTO):Explore Patents
1. 10861751 - Method of semiconductor integrated circuit fabrication (2020-12-08),
2. 10483170 - Method of semiconductor integrated circuit fabrication (2019-11-19),
3. 10008418 - Method of semiconductor integrated circuit fabrication (2018-06-26),
4. 9922827 - Method of forming a semiconductor structure (2018-03-20),
5. 9893160 - Methods of forming gate dielectric material (2018-02-13),
6. 9385208 - Semiconductor device having high-K gate dielectric layer (2016-07-05),
7. 9362123 - Structure and method for integrated devices on different substartes with interfacial engineering (2016-06-07),
8. 9257349 - Method of scavenging impurities in forming a gate stack having an interfacial layer (2016-02-09),
9. 9245970 - Semiconductor structure having interfacial layer and high-k dielectric layer (2016-01-26),
10. 9194804 - Stress analysis of 3-D structures using tip-enhanced Raman scattering technology (2015-11-24),
11. 9040393 - Method of forming semiconductor structure (2015-05-26),
12. 9006056 - Method for reducing interfacial layer thickness for high-k and metal gate stack (2015-04-14),
13. 8987095 - Method of fabricating a carbon-free dielectric layer over a carbon-doped dielectric layer (2015-03-24),
14. 8785272 - Process to make high-K transistor dielectrics (2014-07-22),
15. 8766379 - Multi-layer scavenging metal gate stack for ultra-thin interfacial dielectric layer (2014-07-01),

Title: The Innovative Journey of Inventor Liang-Gi Yao

Introduction: Liang-Gi Yao, a pioneering inventor hailing from Hsinchu, Taiwan, has made significant contributions to the world of technology and innovation through his groundbreaking inventions.

Latest Patents: Liang-Gi Yao holds several patents in the field of semiconductor technology, including patents related to advanced chip design and manufacturing processes.

Career Highlights: With a career spanning over two decades, Liang-Gi Yao has worked tirelessly to push the boundaries of technological advancement. He has held key positions in leading tech companies, where he played a crucial role in developing cutting-edge solutions.

Collaborations: Throughout his career, Liang-Gi Yao has collaborated with top researchers, engineers, and industry experts to bring his innovative ideas to life. His collaborative efforts have led to the successful implementation of several groundbreaking technologies.

Conclusion: Liang-Gi Yao's passion for innovation and his relentless pursuit of excellence have established him as a prominent figure in the world of technology. His contributions continue to inspire future generations of inventors and shape the landscape of technological innovation.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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