The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 20, 2018
Filed:
May. 15, 2015
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Liang-Gi Yao, Shin Chu, TW;
Chia-Cheng Chen, Hsinchu, TW;
Ta-Ming Kuan, Zhongli, TW;
Jeff J. Xu, Jhubei, TW;
Clement Hsingjen Wann, Carmel, NY (US);
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A method of cleaning a semiconductor structure includes rotating a semiconductor structure. The method of cleaning further includes cleaning the semiconductor structure with a hydrogen fluoride (HF)-containing gas. A method of forming a semiconductor device includes forming a recess in a source/drain (S/D) region of a transistor. The method of forming further includes cleaning the recess with a HF-containing gas, the HF-containing gas having an oxide removing rate of about 2 nanometer/minute (nm/min) or less. The method of forming further includes epitaxially forming a strain structure in the recess after the cleaning the recess, the strain structure providing a strain to a channel region of the transistor.