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For the Inventor, By the Inventor

Jhubei, Taiwan

Jeff J Xu

USPTO Granted Patents = 58 

Average Co-Inventor Count = 2.5

ph-index = 14

Forward Citations = 2,004(Granted Patents)

Forward Citations (Not Self Cited) = 1,954(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Hsinchu, TW (2015)
  • Jhubei, TW (2011 - 2023)

Company Filing History:

goldMedal58 out of 40,780 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents

Years Active: 2011-2025

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Areas of Expertise:
Strained Structure
FinFET Device
Metal Gate Devices
Semiconductor Structure
Epitaxial Feature
High Germanium Concentration
Carrier Mobility Enhancement
Integrated Circuit Transistor
High-k Dielectric Layer
EPI Film
Source/Drain Structures
Non-uniformity Reduction
58 patents (USPTO):Explore Patents
1. 12356674 - Method for fabricating a strained structure and structure formed (2025-07-08),
2. 11855210 - Method for fabricating a strained structure and structure formed (2023-12-26),
3. 11251303 - Method for fabricating a strained structure and structure formed (2022-02-15),
4. 11171134 - Techniques providing metal gate devices with multiple barrier layers (2021-11-09),
5. 10998442 - Method for fabricating a strained structure and structure formed (2021-05-04),
6. 10818661 - Fin-like field effect transistor (FinFET) device and method of manufacturing same (2020-10-27),
7. 10693003 - Integrated circuit transistor structure with high germanium concentration SiGe stressor (2020-06-23),
8. 10522544 - Techniques providing metal gate devices with multiple barrier layers (2019-12-31),
9. 10510887 - Method for fabricating a strained structure and structure formed (2019-12-17),
10. 10468408 - Fin-like field effect transistor (FinFET) device and method of manufacturing same (2019-11-05),
11. 10312236 - Techniques providing metal gate devices with multiple barrier layers (2019-06-04),
12. 10090300 - Fin-like field effect transistor (FinFET) device and method of manufacturing same (2018-10-02),
13. 9922827 - Method of forming a semiconductor structure (2018-03-20),
14. 9911735 - Fin-like field effect transistor (FinFET) device and method of manufacturing same (2018-03-06),
15. 9831243 - Techniques providing metal gate devices with multiple barrier layers (2017-11-28),

Title: The Innovative Journey of Jeff J Xu

Introduction: Jeff J Xu is a pioneering inventor based in Jhubei, Taiwan, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Jeff J Xu holds several patents in the areas of artificial intelligence, robotics, and renewable energy technologies, showcasing his commitment to pushing the boundaries of technological advancement.

Career Highlights: With a career spanning over two decades, Jeff J Xu has worked with leading tech companies and research institutions, playing a key role in developing cutting-edge solutions that have revolutionized industries.

Collaborations: Throughout his career, Jeff J Xu has collaborated with top engineers, scientists, and researchers from around the world, fostering a culture of innovation and knowledge sharing to drive progress in the tech sector.

Conclusion: Jeff J Xu's relentless pursuit of innovation and his passion for creating solutions that make a difference have solidified his reputation as a visionary inventor in the global tech community.

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