Jeff J Xu

This inventor holds 58 USPTO granted patents and 2 published patent applications, primarily in FinFET Technology (CPC class H01L). Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2011-2025.

USPTO Granted Patents = 58 (Patent Applications = 2)

% Patents Active = 67.2

Average Co-Inventor Count = 2.5

ph-index = 14

Forward Citations = 2,026(Granted Patents)

Forward Citations (Not Self Cited) = 1,954(Dec 10, 2025)

Inventors with similar research interests:

Location History:

Hsinchu, TW (2015)
Jhubei, TW (2011 - 2023)

Company Filing History:

58 out of 42,711

Taiwan Semiconductor Manufacturing Comp. Ltd.

patents

Years Active: 2011-2025

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Areas of Expertise:

FinFET Device

Metal Gate Devices

Strained Structures

Epitaxial Feature

Carrier Mobility

High-k Dielectric Layer

Semiconductor Structure

EPI Film

Source/Drain Stressor

Germanium Concentration

Interfacial Layer

Planarization

58 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12356674 - Method for fabricating a strained structure and structure formed (2025-07-08),

2. 11855210 - Method for fabricating a strained structure and structure formed (2023-12-26),

3. 11251303 - Method for fabricating a strained structure and structure formed (2022-02-15),

4. 11171134 - Techniques providing metal gate devices with multiple barrier layers (2021-11-09),

5. 10998442 - Method for fabricating a strained structure and structure formed (2021-05-04),

6. 10818661 - Fin-like field effect transistor (FinFET) device and method of manufacturing same (2020-10-27),

7. 10693003 - Integrated circuit transistor structure with high germanium concentration SiGe stressor (2020-06-23),

8. 10522544 - Techniques providing metal gate devices with multiple barrier layers (2019-12-31),

9. 10510887 - Method for fabricating a strained structure and structure formed (2019-12-17),

10. 10468408 - Fin-like field effect transistor (FinFET) device and method of manufacturing same (2019-11-05),

11. 10312236 - Techniques providing metal gate devices with multiple barrier layers (2019-06-04),

12. 10090300 - Fin-like field effect transistor (FinFET) device and method of manufacturing same (2018-10-02),

13. 9922827 - Method of forming a semiconductor structure (2018-03-20),

14. 9911735 - Fin-like field effect transistor (FinFET) device and method of manufacturing same (2018-03-06),

15. 9831243 - Techniques providing metal gate devices with multiple barrier layers (2017-11-28),

Title: The Innovative Journey of Jeff J Xu

Introduction: Jeff J Xu is a pioneering inventor based in Jhubei, Taiwan, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Jeff J Xu holds several patents in the areas of artificial intelligence, robotics, and renewable energy technologies, showcasing his commitment to pushing the boundaries of technological advancement.

Career Highlights: With a career spanning over two decades, Jeff J Xu has worked with leading tech companies and research institutions, playing a key role in developing cutting-edge solutions that have revolutionized industries.

Collaborations: Throughout his career, Jeff J Xu has collaborated with top engineers, scientists, and researchers from around the world, fostering a culture of innovation and knowledge sharing to drive progress in the tech sector.

Conclusion: Jeff J Xu's relentless pursuit of innovation and his passion for creating solutions that make a difference have solidified his reputation as a visionary inventor in the global tech community.