The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 05, 2019

Filed:

Feb. 19, 2018
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Inventors:

Chih-Hao Chang, Chu-Bei, TW;

Jeff J. Xu, Jhubei, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/088 (2006.01); H01L 29/06 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 27/12 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01); H01L 29/165 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0886 (2013.01); H01L 27/12 (2013.01); H01L 29/0642 (2013.01); H01L 29/0847 (2013.01); H01L 29/1054 (2013.01); H01L 29/165 (2013.01); H01L 29/66795 (2013.01); H01L 29/7848 (2013.01); H01L 29/7851 (2013.01);
Abstract

A semiconductor device includes a semiconductor substrate and two fin structures. Channels of the fin structures include a second semiconductor material portion over a first semiconductor material portion. Source and drain regions of the first fin structure include a third semiconductor material portion over the first semiconductor material portion. Source and drain regions of the second fin structure include the second semiconductor material portion over the first semiconductor material portion and a fourth semiconductor material portion over the second semiconductor material portion. The first, second, third, and fourth semiconductor material portions are different in composition from each other.


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