The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 27, 2020
Filed:
Nov. 01, 2019
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Chih-Hao Chang, Chu-Bei, TW;
Jeff J. Xu, Jhubei, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
Methods for fabricating FinFETs with enhanced performance are disclosed herein. An exemplary method includes forming a first fin and a second fin having a trench defined therebetween. The first fin and the second fin each include a first semiconductor layer disposed over a second semiconductor layer. An isolation feature is formed in the trench between the first fin and the second fin. A gate structure is formed over the isolation feature, a first region of the first fin, and a first region of the second fin. The gate structure is disposed between second regions of the first fin and between second regions of the second fin. After recessing the first fin and the second fin, a third semiconductor layer is formed over the first fin and the second fin. In some embodiments, the third semiconductor layer extends over the isolation feature and merges the first fin and the second fin.