The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 23, 2020
Filed:
May. 19, 2017
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Chih-Hao Chang, Chu-Bei, TW;
Jeff J. Xu, Jhubei, TW;
Chien-Hsun Wang, Hsinchu, TW;
Chih Chieh Yeh, Taipei, TW;
Chih-Hsiang Chang, Taipei, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
An embodiment of a method for forming a transistor that includes providing a semiconductor substrate having a source/drain region is provided where a first SiGe layer is formed over the source/drain region. A thermal oxidation is performed to convert a top portion of the first SiGe layer to an oxide layer and a bottom portion of the first SiGe layer to a second SiGe layer. A thermal diffusion process is performed after the thermal oxidation is performed to form a SiGe area from the second SiGe layer. The SiGe area has a higher Ge concentration than the first SiGe layer.