The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 24, 2015
Filed:
Sep. 03, 2013
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Liang-Gi Yao, Hsin-Chu, TW;
Yasutoshi Okuno, Hsin-Chu, TW;
Wei-Shan Hu, New Taipei, TW;
Yusuke Oniki, Hsin-Chu, TW;
Ling-Yen Yeh, Hsin-Chu, TW;
Clement Hsingjen Wann, Carmel, NY (US);
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A method includes performing a first probing on a sample integrated circuit structure to generate a first Raman spectrum. During the first probing, a first laser beam having a first wavelength is projected on the sample integrated circuit structure. The method further includes performing a second probing on the sample integrated circuit structure to generate a second Raman spectrum, wherein a Tip-Enhanced Raman Scattering (TERS) method is used to probe the sample integrated circuit structure. During the second probing, a second laser beam having a second wavelength different from the first wavelength is projected on the sample integrated circuit structure. A stress in a first probed region of the sample integrated circuit structure is then from the first Raman spectrum and the second Raman spectrum.