The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 08, 2020
Filed:
Nov. 18, 2019
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
De-Wei Yu, Ping-Tung, TW;
Chia Ping Lo, Jhubei, TW;
Liang-Gi Yao, Shin Chu, TW;
Weng Chang, Hsin-Chu, TW;
Yee-Chia Yeo, Hsinchu, TW;
Ziwei Fang, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsin-Chu, TW;
Abstract
A method includes providing a substrate including a first fin element and a second fin element extending from the substrate, and forming a first layer including a first material over the first and second fin elements, wherein the first layer includes a gap disposed between the first and second fin elements. An anneal process is performed to remove the gap in the first layer, wherein performing the anneal process includes adjusting an energy applied to the first layer during the anneal process. The gap is filled by a portion of the first material around the gap reaching a sub-melt temperature that is different from a melting point of the first material.