The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 26, 2016
Filed:
Mar. 09, 2015
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Liang-Gi Yao, Hsinchu, TW;
Chun-Hu Cheng, Hsinchu, TW;
Chen-Yi Lee, Keelung, TW;
Jeff J. Xu, Jhubei, TW;
Clement Hsingjen Wann, Carmel, NY (US);
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/51 (2006.01); H01L 21/02 (2006.01); H01L 29/423 (2006.01); H01L 29/78 (2006.01); H01L 21/28 (2006.01); H01L 21/283 (2006.01);
U.S. Cl.
CPC ...
H01L 29/513 (2013.01); H01L 21/022 (2013.01); H01L 21/02172 (2013.01); H01L 21/283 (2013.01); H01L 21/28158 (2013.01); H01L 21/28211 (2013.01); H01L 29/42364 (2013.01); H01L 29/517 (2013.01); H01L 29/78 (2013.01);
Abstract
A semiconductor structure includes a semiconductor substrate. The semiconductor structure further includes an interfacial layer over the semiconductor substrate, the interfacial layer having a capacitive effective thickness of less than 1.37 nanometers (nm). The semiconductor structure further includes a high-k dielectric layer over the interfacial layer.