The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 22, 2014
Filed:
Sep. 01, 2011
Applicants:
Liang-gi Yao, Hsin-Chu, TW;
Ming-fang Wang, Taichung, TW;
Shih-chang Chen, Taoyuan, TW;
Mong-song Liang, Hsin-Chu, TW;
Inventors:
Liang-Gi Yao, Hsin-Chu, TW;
Ming-Fang Wang, Taichung, TW;
Shih-Chang Chen, Taoyuan, TW;
Mong-Song Liang, Hsin-Chu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/28 (2006.01); H01L 21/314 (2006.01);
U.S. Cl.
CPC ...
H01L 21/28185 (2013.01); H01L 21/28194 (2013.01); H01L 21/3141 (2013.01);
Abstract
A method of reducing impurities in a high-k dielectric layer comprising the following steps. A substrate is provided. A high-k dielectric layer having impurities is formed over the substrate. The high-k dielectric layer being formed by an MOCVD or an ALCVD process. The high-k dielectric layer is annealed to reduce the impurities within the high-k dielectric layer.