The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 05, 2016
Filed:
Mar. 23, 2015
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Kun-Yu Lee, Tainan, TW;
Liang-Gi Yao, Shin Chu, TW;
Yasutoshi Okuno, Hsinchu, TW;
Clement Hsingjen Wann, Carmel, NY (US);
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/51 (2006.01); H01L 21/28 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/513 (2013.01); H01L 21/28185 (2013.01); H01L 21/28194 (2013.01); H01L 29/42364 (2013.01); H01L 29/517 (2013.01); H01L 29/78 (2013.01); H01L 29/66545 (2013.01); H01L 29/7833 (2013.01);
Abstract
A semiconductor device includes a substrate and a gate structure over the substrate. The gate structure includes a dielectric portion and an electrode portion that is disposed over the dielectric portion. The dielectric portion includes a carbon-doped high dielectric constant (high-k) dielectric layer over the substrate and a carbon-free high-k dielectric layer adjacent to the electrode portion.
Lee, Kun-Yu. (2016). Semiconductor device having high-k gate dielectric layer (U.S. Patent No. 9385208). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9385208
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile