The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 13, 2018
Filed:
Nov. 15, 2013
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/31 (2006.01); H01L 21/469 (2006.01); H01L 29/49 (2006.01); H01L 21/28 (2006.01); H01L 29/51 (2006.01); H01L 29/66 (2006.01); H01L 21/283 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/4983 (2013.01); H01L 21/283 (2013.01); H01L 21/28185 (2013.01); H01L 21/28211 (2013.01); H01L 29/51 (2013.01); H01L 29/513 (2013.01); H01L 29/6659 (2013.01); H01L 29/49 (2013.01); H01L 29/7833 (2013.01);
Abstract
A method of fabricating a semiconductor device includes contacting water with a silicon oxide layer. The method further includes diffusing an ozone-containing gas through water to treat the silicon oxide layer. The method further includes forming a dielectric layer over the treated silicon oxide layer.