The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 26, 2018
Filed:
Sep. 30, 2016
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
De-Wei Yu, Ping-Tung, TW;
Chia-Ping Lo, Jhubei, TW;
Liang-Gi Yao, Shun Chu, TW;
Weng Chang, Hsin-Chu, TW;
Yee-Chia Yeo, Hsinchu, TW;
Ziwei Fang, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
A method of semiconductor device fabrication includes providing a substrate including a first fin element and a second fin element extending from the substrate. A first layer is formed over the first and second fin elements, where the first layer includes a gap. A laser anneal process is performed to the substrate to remove the gap in the first layer. An energy applied to the first layer during the laser anneal process is adjusted based on a height of the first layer.