The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 24, 2015
Filed:
Aug. 19, 2011
Kun-yu Lee, Tainan, TW;
Liang-gi Yao, Shin Chu, TW;
Yasutoshi Okuno, Kyoto, JP;
Clement Hsingjen Wann, Carmel, NY (US);
Kun-Yu Lee, Tainan, TW;
Liang-Gi Yao, Shin Chu, TW;
Yasutoshi Okuno, Kyoto, JP;
Clement Hsingjen Wann, Carmel, NY (US);
Abstract
The disclosure relates to integrated circuit fabrication and, more particularly, to a semiconductor device with a high-k gate dielectric layer. An exemplary structure for a semiconductor device comprises a substrate and a gate structure disposed over the substrate. The gate structure comprises a dielectric portion and an electrode portion that is disposed over the dielectric portion, and the dielectric portion comprises a carbon-doped high-k dielectric layer on the substrate and a carbon-free high-k dielectric layer adjacent to the electrode portion.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile