Li-Shian Jeng

Title: Innovative Achievements of Li-Shian Jeng

Introduction:

Li-Shian Jeng, based in Taitung, Taiwan, is a notable inventor recognized for his significant contributions to the field of semiconductor technology. With a total of 22 patents to his name, his work has paved the way for advancements in modern electronics.

Latest Patents:

Among his latest innovations, Li-Shian Jeng has developed a patented Method for Fabricating Field-Effect Transistor. This method includes several key steps: forming a first and second gate structure on a substrate, executing a first co-implantation process to define source/drain extension region depth profiles, and performing additional implantation processes to create a first pocket region adjacent to the second gate structure. His other recent patent, a Method of Forming MOS Device, outlines a procedure for creating metal-oxide-semiconductor devices. This involves the formation of trenches in substrates, filling them with silicon germanium layers through selective epitaxy growth, and constructing source/drain regions via ion implantation, thus reducing undesirable effects associated with such processes.

Career Highlights:

Li-Shian Jeng has dedicated his career to the development of cutting-edge semiconductor technologies at United Microelectronics Corporation, where he has actively contributed to advancing metal-oxide-semiconductor (MOS) technology. His expertise and innovative methods have enhanced device performance and manufacturing efficiency.

Collaborations:

Throughout his career, Li-Shian has collaborated with esteemed colleagues such as Shyh-Fann Ting and Cheng-Tung Huang. Their joint efforts in research and development have led to groundbreaking advancements in semiconductor technologies.

Conclusion:

Li-Shian Jeng's innovative contributions and numerous patents highlight his essential role in the field of semiconductor technology. His work continues to influence the industry, promoting advancements that shape the future of electronics.