The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 19, 2011
Filed:
Jul. 12, 2007
Kun-hsien Lee, Tainan, TW;
Cheng-tung Huang, Kaohsiung, TW;
Wen-han Hung, Kaohsiung, TW;
Shyh-fann Ting, Kaohsiung County, TW;
Li-shian Jeng, Taitung, TW;
Tzyy-ming Cheng, Hsinchu, TW;
Chia-wen Lang, Hsinchu, TW;
Kun-Hsien Lee, Tainan, TW;
Cheng-Tung Huang, Kaohsiung, TW;
Wen-Han Hung, Kaohsiung, TW;
Shyh-Fann Ting, Kaohsiung County, TW;
Li-Shian Jeng, Taitung, TW;
Tzyy-Ming Cheng, Hsinchu, TW;
Chia-Wen Lang, Hsinchu, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
A semiconductor device is provided herein, which includes a substrate having a first-type MOS transistor, an input/output (I/O) second-type MOS transistor, and a core second-type MOS transistor formed thereon. The semiconductor device further includes a first stress layer and a second stress layer. The first stress layer is disposed on the first-type MOS transistor, or on the first-type MOS transistor and the I/O second-type MOS transistor. The second stress layer is disposed on the core second-type MOS transistor.