Hsinchu, Taiwan

Tzyy-Ming Cheng

This inventor holds 39 USPTO granted patents and 8 published patent applications, primarily in Semiconductor Devices. Top assignees: United Microelectronics Corp., International Business Machines Corporation. Active years: 2004-2024.

USPTO Granted Patents = 39 

% Patents Active = 97.4

Average Co-Inventor Count = 6.1

ph-index = 7

Forward Citations = 161(Granted Patents)


Location History:

  • Hsincu, TW (2011)
  • Hsinchu, TW (2004 - 2018)

Company Filing History:


Years Active: 2004-2024

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Areas of Expertise:
High Electron Mobility Transistor
Nonvolatile Memory
Metal Gate Structure
Semiconductor Fabrication
Field-Effect Transistor
Complementary Metal Oxide Semiconductor
Strained-Silicon Transistor
Gate Dielectric Layer
Transistor Structure
Embedded DRAM
MOS Transistor
Semiconductor Structure
39 patents (USPTO):Explore Patents

Title: Tzyy-Ming Cheng: Innovator in Semiconductor Technology

Introduction

Tzyy-Ming Cheng is a prominent inventor based in Hsinchu, Taiwan, known for his significant contributions to semiconductor technology. With an impressive portfolio of 39 patents, Cheng's work has advanced the field of electronics and has had a profound impact on modern computing.

Latest Patents

Cheng's latest innovations include a cutting-edge high electron mobility transistor (HEMT) device. This device consists of several components, such as a gate electrode on a barrier layer, a source electrode positioned on one side of the gate, and a drain electrode on the opposite side. Additionally, it features a source field plate that includes three elements designed to enhance performance. The design ensures optimal functionality with a first opening directly above the gate electrode, showcasing Cheng’s ingenuity in semiconductor device engineering.

Another significant patent involves a method for fabricating an embedded nonvolatile memory device. This method utilizes a semiconductor substrate with a fin body that is crucial for efficient charge storage. It outlines the steps for forming a charge storage layer, polishing an inter-layer dielectric layer, and creating separate charge storage structures. The innovation of utilizing a high-k dielectric layer and forming a word line on these structures represents a major step forward in memory technology.

Career Highlights

Throughout his career, Tzyy-Ming Cheng has been associated with leading organizations in the field, notably United Microelectronics Corporation and International Business Machines Corporation (IBM). His experience and expertise in these prestigious companies have bolstered his reputation as a pioneer in semiconductor technology.

Collaborations

Cheng has had the opportunity to work alongside notable colleagues such as Wen-Han Hung and Cheng-Tung Huang. Their collaborative efforts have fostered an environment of innovation and creativity, further enhancing the technological advancements associated with Cheng's work.

Conclusion

Tzyy-Ming Cheng stands out as a key figure in the world of semiconductor inventions. With a robust portfolio of patents and a track record of influential collaborations, his contributions continue to shape the future of electronics. Cheng's dedication to innovation exemplifies the spirit of progress in technology, making him an inspiring inventor in today’s competitive landscape.

Profile summary based on public USPTO records.
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