The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 08, 2016
Filed:
Jun. 01, 2015
United Microelectronics Corp., Hsin-Chu, TW;
Huai-Tzu Chiang, Tainan, TW;
Sheng-Hao Lin, Hsinchu County, TW;
Hsin-Yu Chen, Nantou County, TW;
Hao-Ming Lee, Taichung, TW;
Tzyy-Ming Cheng, Hsinchu, TW;
UNITED MICROELECTRONICS CORP., Science-Based Industrial Park, Hsin-Chu, TW;
Abstract
A method of fabricating a semiconductor device with fin-shaped structures includes respectively forming first fin-shaped structures in a first region and a second region of a semiconductor substrate, depositing a dielectric layer to completely cover the first fin-shaped structures, removing the first fin-shaped structures in the second region so as to form trenches in the dielectric layer, and performing an in-situ doping epitaxial growth process so as to respectively form second fin-shaped structures in the trenches.