Sheng-Hao Lin

Title: Sheng-Hao Lin: Innovator in High Electron Mobility Transistor Technology

Introduction: Sheng-Hao Lin is a notable inventor based in Hsinchu County, Taiwan. With an impressive portfolio of 26 patents, he has significantly contributed to the field of semiconductor technology, particularly in high electron mobility transistors (HEMTs). His work has positioned him as a valuable asset in the innovation landscape.

Latest Patents: Sheng-Hao Lin's recent patents reflect his expertise in HEMT technology. One of his notable inventions is a high electron mobility transistor that includes a gallium nitride layer complemented by an aluminum gallium nitride layer. The design features a gate constructed from P-type gallium nitride, which contacts a Schottky contact layer. This innovative approach ensures that the top surface of the P-type gallium nitride overlaps the bottom surface of the Schottky contact layer. Furthermore, a protective layer safeguards the aluminum gallium nitride layer and the gate itself. The device is equipped with a source electrode and a drain electrode that penetrate the protective layer, thereby contacting the aluminum gallium nitride layer, while a gate electrode is positioned on the gate, connecting with the Schottky contact layer.

Career Highlights: Sheng-Hao Lin is currently employed at United Microelectronics Corporation, where he continues to drive advancements in semiconductor technologies. His expertise in the fabrication methods of HEMTs facilitates the development of high-performance electronic devices that are critical to modern technology.

Collaborations: Throughout his career, Sheng-Hao Lin has collaborated with esteemed professionals such as Huai-Tzu Chiang and Hao-Ming Lee. These partnerships have fostered innovation and have contributed to the successful development of groundbreaking technologies within the realm of high electron mobility transistors.

Conclusion: Sheng-Hao Lin's contributions to the field of semiconductor technology are invaluable. With a focus on high electron mobility transistors and a commitment to innovation, he continues to make significant strides in his field. His work not only enhances the capabilities of electronic devices but also sets the stage for future advancements in technology.