The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 11, 2025
Filed:
Mar. 29, 2021
United Microelectronics Corp., Hsin-Chu, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Abstract
An HEMT includes a gallium nitride layer. An aluminum gallium nitride layer is disposed on the gallium nitride layer. A gate is disposed on the aluminum gallium nitride layer. The gate includes a P-type gallium nitride and a schottky contact layer. The P-type gallium nitride contacts the schottky contact layer, and a top surface of the P-type gallium nitride entirely overlaps a bottom surface of the schottky contact layer. A protective layer covers the aluminum gallium nitride layer and the gate. A source electrode is disposed at one side of the gate, penetrates the protective layer and contacts the aluminum gallium nitride layer. A drain electrode is disposed at another side of the gate, penetrates the protective layer and contacts the aluminum gallium nitride layer. A gate electrode is disposed directly on the gate, penetrates the protective layer and contacts the schottky contact layer.