Method for forming semiconductor structure

Abstract

The present invention provides a method for forming a semiconductor structure, at least including the following steps: first, four sacrificial patterns are formed on a substrate, and a plurality of spacers are then formed surrounding each sacrificial pattern. Next, the four sacrificial patterns are removed, and a photoresist layer is formed between each spacer, covering parts of each spacer. Afterwards, a first etching process is performed to partially remove each spacer, and the photoresist layer is then removed, and a second etching process is then performed, to remove each spacer again, and to form four nanowire hard masks.