The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 01, 2019
Filed:
Dec. 07, 2017
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Inventors:
Hsin-Yu Chen, Hsinchu County, TW;
Huai-Tzu Chiang, Tainan, TW;
Sheng-Hao Lin, Hsinchu, TW;
Hao-Ming Lee, Taichung, TW;
Assignee:
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 29/78 (2006.01); H01L 29/786 (2006.01); H01L 29/66 (2006.01); H01L 29/423 (2006.01); H01L 21/02 (2006.01); H01L 29/10 (2006.01); H01L 29/775 (2006.01); B82Y 10/00 (2011.01); H01L 21/324 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0673 (2013.01); B82Y 10/00 (2013.01); H01L 21/02532 (2013.01); H01L 21/02667 (2013.01); H01L 29/0649 (2013.01); H01L 29/1033 (2013.01); H01L 29/1083 (2013.01); H01L 29/42392 (2013.01); H01L 29/66439 (2013.01); H01L 29/66742 (2013.01); H01L 29/66772 (2013.01); H01L 29/775 (2013.01); H01L 29/786 (2013.01); H01L 29/7848 (2013.01); H01L 29/78654 (2013.01); H01L 29/78684 (2013.01); H01L 29/78696 (2013.01); H01L 21/3247 (2013.01);
Abstract
A semiconductor device and a method of forming the same, the semiconductor device includes a single crystal substrate, a source/drain structure and a nanowire structure. The source/drain structure is disposed on and contacts with the substrate. The nanowire structure is connected to the source/drain structure.