The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 08, 2019

Filed:

Oct. 30, 2017
Applicant:

United Microelectronics Corp., Hsinchu, TW;

Inventors:

Chien-Hung Chen, Hsinchu County, TW;

Shih-Hsien Huang, Kaohsiung, TW;

Yu-Ru Yang, Hsinchu County, TW;

Huai-Tzu Chiang, Tainan, TW;

Hao-Ming Lee, Taichung, TW;

Sheng-Hao Lin, Hsinchu County, TW;

Cheng-Tzung Tsai, Taipei, TW;

Chun-Yuan Wu, Yunlin County, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 29/06 (2006.01); H01L 29/10 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 21/306 (2006.01); H01L 29/165 (2006.01); H01L 21/3065 (2006.01);
U.S. Cl.
CPC ...
H01L 29/165 (2013.01); H01L 21/02532 (2013.01); H01L 21/02609 (2013.01); H01L 21/3065 (2013.01); H01L 21/30604 (2013.01); H01L 29/0657 (2013.01); H01L 29/1054 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01);
Abstract

A semiconductor device comprises a semiconductor substrate and a semiconductor fin. The semiconductor substrate has an upper surface and a recess extending downwards into the semiconductor substrate from the upper surface. The semiconductor fin is disposed in the recess and extends upwards beyond the upper surface, wherein the semiconductor fin is directly in contact with semiconductor substrate, so as to form at least one semiconductor hetero-interface on a sidewall of the recess.


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