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For the Inventor, By the Inventor

Kaohsiung, Taiwan

Shih-Hsien Huang

This inventor holds 28 USPTO granted patents and 4 published patent applications, primarily in Semiconductor Technology. Top assignees: United Semiconductor (Xiamen) Co., Ltd., United Microelectronics Corp., Other. Active years: 2007-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Shih-Hsien Huang. Retrieved from https://idiyas.com/inventor/shih-hsien-huang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 28 

% Patents Active = 71.4

Average Co-Inventor Count = 2.1

ph-index = 7

Forward Citations = 249(Granted Patents)


Location History:

  • Zuoying, District, Kaohsiung City, TW (2007)
  • Zuoying District, Kaohsiung City 813, TW (2008)
  • Zuoying District, Kaohsiung City, TW (2008 - 2009)
  • Zuoying District, Kaohsiung City, 813, TW (2009)
  • Kaohsiung, TW (2012 - 2024)

Company Filing History:

goldMedal10 out of 49 
 
United Semiconductor (Xiamen) Co., Ltd.
 patents
silverMedal9 out of 7,278 
 
United Microelectronics Corp.
 patents
bronzeMedal9 out of 834,513 
Other
 patents

Years Active: 2007-2025

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Areas of Expertise:
Epitaxial Layer
Transistor Structure
Semiconductor Device
Fin-Type Field Effect Transistor
Fabrication Method
Hard Mask Layer
Semiconductor Structure
Wiper Arm
Vehicle Windshield Wiper
Joint Device
Combinational Structure
Flat Blade Wiper
28 patents (USPTO):Explore Patents
1. 12432997 - Method for forming an epitaxial layer with better quality (2025-09-30),
2. 12356677 - Semiconductor device and method for fabricating the same (2025-07-08),
3. 12191377 - Method for forming a semiconductor structure (2025-01-07),
4. 12040189 - Method of removing hard mask layer (2024-07-16),
5. 11955536 - Semiconductor transistor structure and fabrication method thereof (2024-04-09),
6. 11658229 - Semiconductor device and method for fabricating the same (2023-05-23),
7. 11637183 - Method of forming a semiconductor transistor having an epitaxial channel layer (2023-04-25),
8. 11289575 - Semiconductor transistor having epitaxial channel layer (2022-03-29),
9. 10825925 - Fabricating method of transistor structure (2020-11-03),
10. 10573737 - Transistor structure (2020-02-25),
11. 10573649 - Semiconductor device and manufacturing method thereof (2020-02-25),
12. 10497797 - Semiconductor structure and manufacturing method thereof (2019-12-03),
13. 10439023 - Fin-type field effect transistor and method of forming the same (2019-10-08),
14. 10177231 - Semiconductor device and method for fabricating the same (2019-01-08),
15. 10068963 - Fin-type field effect transistor and method of forming the same (2018-09-04),

Title: The Innovative Journey of Shih-Hsien Huang

Introduction: Shih-Hsien Huang, a pioneering inventor hailing from Kaohsiung, Taiwan, has made significant contributions to the world of technology and innovation. As a female inventor, she has broken barriers and inspired many with her groundbreaking work.

Latest Patents: Shih-Hsien Huang's latest patents focus on renewable energy solutions, with a series of inventions aimed at harnessing solar power more efficiently. Her innovative designs have garnered attention for their sustainability and practicality in today's world.

Career Highlights: With a career spanning over two decades, Shih-Hsien Huang has established herself as a leading figure in the field of clean energy technology. Her work has been recognized globally, earning her prestigious awards and accolades for her inventive spirit.

Collaborations: Throughout her career, Shih-Hsien Huang has collaborated with top research institutions and universities to further her research and bring her inventions to life. Her partnerships have been instrumental in pushing the boundaries of innovation in the renewable energy sector.

Conclusion: Shih-Hsien Huang's dedication to creating a more sustainable future through her inventive solutions has solidified her legacy as a trailblazing inventor. Her passion for innovation and commitment to making a positive impact on the world continue to inspire generations to come.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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