The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 03, 2019
Filed:
Nov. 16, 2015
United Microelectronics Corp., Hsin-Chu, TW;
Shih-Hsien Huang, Kaohsiung, TW;
Chien-Hung Chen, Hsinchu County, TW;
Chun-Yuan Wu, Yun-Lin County, TW;
Kun-Hsin Chen, Pingtung County, TW;
Tien-I Wu, Taoyuan, TW;
Yu-Ru Yang, Hsinchu County, TW;
Huai-Tzu Chiang, Tainan, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Abstract
A semiconductor structure including a semiconductor substrate and at least a fin structure formed thereon. The semiconductor substrate includes a first semiconductor material. The fin structure includes a first epitaxial layer and a second epitaxial layer formed between the first epitaxial layer and the semiconductor substrate. The first epitaxial layer includes the first semiconductor material and a second semiconductor material. A lattice constant of the second semiconductor material is different from a lattice constant of the first semiconductor material. The second epitaxial layer includes the first semiconductor material and the second semiconductor material. The second epitaxial layer further includes conductive dopants.