The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 09, 2024
Filed:
Jul. 15, 2021
Applicant:
United Semiconductor (Xiamen) Co., Ltd., Fujian, CN;
Inventors:
Assignee:
United Semiconductor (Xiamen) Co., Ltd., Fujian, CN;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 21/8234 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66795 (2013.01); H01L 21/823431 (2013.01); H01L 29/7848 (2013.01); H01L 29/7851 (2013.01);
Abstract
A semiconductor transistor structure includes a substrate with a first conductivity type, a fin structure grown on the substrate, and a gate on the fin structure. The fin structure includes a first epitaxial layer having a second conductivity type opposite to the first conductivity type, a second epitaxial layer on the first epitaxial layer, and a third epitaxial layer having the second conductivity type on the second epitaxial layer.