The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 30, 2025
Filed:
Aug. 16, 2022
Applicant:
United Semiconductor (Xiamen) Co., Ltd., Fujian, CN;
Inventors:
Yong Xie, Shamen, CN;
Qiang Gao, Shamen, CN;
Shih-Hsien Huang, Kaohsiung, TW;
Wen Yi Tan, Fujian, CN;
Assignee:
United Semiconductor (Xiamen) Co., Ltd., Fujian, CN;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 64/01 (2025.01); H10D 64/62 (2025.01);
U.S. Cl.
CPC ...
H10D 64/01 (2025.01); H10D 64/62 (2025.01);
Abstract
A semiconductor manufacturing method includes providing a substrate, forming a silicon germanium epitaxial layer in the substrate, forming a first silicon layer on the silicon germanium epitaxial layer, wherein the first silicon layer is a pure silicon layer, and forming a second silicon layer on the first silicon layer, wherein the second silicon layer comprises a silicon layer doped with boron atoms, wherein the boron-doped silicon layer does not comprise germanium.