The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 29, 2022
Filed:
Mar. 27, 2020
United Semiconductor (Xiamen) Co., Ltd., Fujian, CN;
United Semiconductor (Xiamen) Co., Ltd., Fujian, CN;
Abstract
A semiconductor transistor is formed on a substrate of a first conductivity type. The substrate has a main surface. An ion well of the second conductivity type is disposed in the substrate. A source region and a drain region spaced apart from the source region are disposed within the ion well. The source region and the drain region have the first conductivity type. An epitaxial channel layer of the first conductivity type is grown from the main surface of the substrate and is disposed between the source region and the drain region. A gate is disposed on the epitaxial channel layer. A gate dielectric layer is disposed between gate and the epitaxial channel layer.