The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 25, 2023
Filed:
Feb. 14, 2022
Applicant:
United Semiconductor (Xiamen) Co., Ltd., Fujian, CN;
Inventors:
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/10 (2006.01); H01L 21/762 (2006.01); H01L 29/66 (2006.01); H01L 29/161 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1033 (2013.01); H01L 21/76224 (2013.01); H01L 29/161 (2013.01); H01L 29/66477 (2013.01);
Abstract
A method for fabricating a semiconductor transistor is disclosed. A substrate of a first conductivity type is provided. An ion well of a second conductivity type is formed in the substrate. An epitaxial channel layer of the first conductivity type is grown from the main surface of the substrate. A gate dielectric layer is formed on the epitaxial channel layer. A gate is formed on the gate dielectric layer. A source region and a drain region are then formed in the substrate. The source region and the drain region have the first conductivity type.