The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 08, 2025
Filed:
Apr. 10, 2023
Applicant:
United Semiconductor (Xiamen) Co., Ltd., Fujian, CN;
Inventors:
Assignee:
United Semiconductor (Xiamen) Co., Ltd., Fujian, CN;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 30/01 (2025.01); H10D 30/60 (2025.01); H10D 62/00 (2025.01); H10D 62/13 (2025.01); H10D 64/01 (2025.01);
U.S. Cl.
CPC ...
H10D 62/021 (2025.01); H10D 30/0227 (2025.01); H10D 30/601 (2025.01); H10D 62/151 (2025.01); H10D 64/015 (2025.01);
Abstract
A method for fabricating semiconductor device includes the steps of first forming a gate structure on a substrate, forming a spacer adjacent to the gate structure, forming a recess adjacent to the spacer, trimming part of the spacer, and then forming an epitaxial layer in the recess. Preferably, the semiconductor device includes a first protrusion adjacent to one side of the epitaxial layer and a second protrusion adjacent to another side of the epitaxial layer, the first protrusion includes a V-shape under the spacer and an angle included by the V-shape is greater than 30 degrees and less than 90 degrees.