The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 25, 2020
Filed:
Feb. 17, 2016
United Microelectronics Corp., Hsin-Chu, TW;
Chien-Hung Chen, Hsinchu County, TW;
Shih-Hsien Huang, Kaohsiung, TW;
Yu-Ru Yang, Hsinchu County, TW;
Chia-Hsun Tseng, Tainan, TW;
Cheng-Tzung Tsai, Taipei, TW;
Chun-Yuan Wu, Yun-Lin County, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Abstract
A semiconductor device includes a substrate, a first well formed in the substrate, a second well formed in the substrate, a first fin formed on the first well, and a second fin formed on the second well. The first well includes a first conductivity type, the second well includes a second conductivity type, and the first conductivity type and the second conductivity type are complementary to each other. The substrate includes a first semiconductor material. The first fin and the second fin include the first semiconductor material and a second semiconductor material. A lattice constant of the second semiconductor material is larger than a lattice constant of the first semiconductor material. The first semiconductor material in the first fin includes a first concentration, the first semiconductor material in the second fin includes a second concentration, and the second concentration is larger than the first concentration.