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For the Inventor, By the Inventor

Taipei, Taiwan

Cheng-Tzung Tsai

USPTO Granted Patents = 16

Average Co-Inventor Count = 5.0

ph-index = 4

Forward Citations = 61(Granted Patents)


Company Filing History:

goldMedal16 out of 7,074 
 
United Microelectronics Corp.
 patents

Years Active: 2001-2020

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16 patents (USPTO):Explore Patents
1. 10573649 - Semiconductor device and manufacturing method thereof (2020-02-25),
2. 10439023 - Fin-type field effect transistor and method of forming the same (2019-10-08),
3. 10177231 - Semiconductor device and method for fabricating the same (2019-01-08),
4. 10068963 - Fin-type field effect transistor and method of forming the same (2018-09-04),
5. 9837493 - Semiconductor device and method for fabricating the same (2017-12-05),
6. 9590041 - Semiconductor structure (2017-03-07),
7. 8592271 - Metal-gate CMOS device and fabrication method thereof (2013-11-26),
8. 8466502 - Metal-gate CMOS device (2013-06-18),
9. 8440514 - Semiconductor device and method for manufacturing the same (2013-05-14),
10. 8273642 - Method of fabricating an NMOS transistor (2012-09-25),
11. 8207523 - Metal oxide semiconductor field effect transistor with strained source/drain extension layer (2012-06-26),
12. 8080454 - Method of fabricating CMOS transistor (2011-12-20),
13. 8058133 - Method of fabrication of metal oxide semiconductor field effect transistor (2011-11-15),
14. 7935590 - Method of manufacturing metal oxide semiconductor and complementary metal oxide semiconductor (2011-05-03),
15. 7714396 - Metal-oxide semiconductor field effect transistor (2010-05-11),

Title: Cheng-Tzung Tsai: Innovator in Semiconductor Technology

Introduction

Cheng-Tzung Tsai is a prominent inventor based in Taipei, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of 16 patents. His work focuses on innovative methods and devices that enhance semiconductor performance and manufacturing processes.

Latest Patents

Among his latest patents, Cheng-Tzung Tsai has developed a semiconductor device and manufacturing method. This invention includes a substrate with a first well and a second well, each formed in the substrate. The device features fins made from complementary semiconductor materials, optimizing performance through careful material selection. Another notable patent is for a Fin-type field effect transistor (FinFET), which includes a substrate, at least one fin, and at least one gate. This design improves the efficiency and effectiveness of semiconductor devices.

Career Highlights

Cheng-Tzung Tsai is currently employed at United Microelectronics Corporation, a leading company in the semiconductor industry. His work has been instrumental in advancing the technology used in modern electronic devices. His innovative approaches have garnered recognition within the field, contributing to the ongoing evolution of semiconductor manufacturing.

Collaborations

Cheng-Tzung Tsai has collaborated with notable colleagues, including Chen-Hua Tsai and Yu-Ru Yang. These partnerships have fostered a creative environment that encourages the development of groundbreaking technologies in semiconductor design and manufacturing.

Conclusion

Cheng-Tzung Tsai's contributions to semiconductor technology through his patents and collaborations highlight his role as a key innovator in the field. His work continues to influence the future of electronics and semiconductor manufacturing.

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