The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 07, 2017
Filed:
Dec. 06, 2015
United Microelectronics Corp., Hsin-Chu, TW;
Yu-Ru Yang, Hsinchu County, TW;
Huai-Tzu Chiang, Tainan, TW;
Sheng-Hao Lin, Hsinchu County, TW;
Shih-Hsien Huang, Kaohsiung, TW;
Chien-Hung Chen, Hsinchu County, TW;
Chun-Yuan Wu, Yun-Lin County, TW;
Cheng-Tzung Tsai, Taipei, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Abstract
A semiconductor structure includes a semiconductor substrate, a dielectric structure formed on the semiconductor substrate and including at least a recess formed therein, a fin formed in the recess, and a dislocation region formed in the fin. The semiconductor substrate includes a first semiconductor material. The fin includes the first semiconductor material and a second semiconductor material. A lattice constant of the second semiconductor material is different from a lattice constant of the first semiconductor material. A topmost portion of the dislocation region is higher than an opening of the recess.