The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 20, 2011
Filed:
Oct. 26, 2009
Applicants:
Wen-tai Chiang, Tainan County, TW;
Chen-hua Tsai, Hsinchu County, TW;
Cheng-tzung Tsai, Taipei, TW;
Po-wei Liu, Taichung, TW;
Inventors:
Wen-Tai Chiang, Tainan County, TW;
Chen-Hua Tsai, Hsinchu County, TW;
Cheng-Tzung Tsai, Taipei, TW;
Po-Wei Liu, Taichung, TW;
Assignee:
United Microelectronics Corp., Science-Based Industrial Park, Hsin-Chu, TW;
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of fabricating a CMOS transistor includes forming strained channels by re-crystallized amorphous polysilicon with the tensile film or the compressive film during annealing. C or Ge ions are optionally used to form solid-phase epitaxy to amplify the stress in the strained channel. Therefore, the charge carrier mobility in a CMOS transistor is improved.