The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 25, 2012
Filed:
Oct. 04, 2010
Chen-hua Tsai, Hsinchu County, TW;
Po-jui Liao, Taichung, TW;
Tzu-feng Kuo, Hsinchu, TW;
Ching-i LI, Tainan, TW;
Cheng-tzung Tsai, Taipei, TW;
Chen-Hua Tsai, Hsinchu County, TW;
Po-Jui Liao, Taichung, TW;
Tzu-Feng Kuo, Hsinchu, TW;
Ching-I Li, Tainan, TW;
Cheng-Tzung Tsai, Taipei, TW;
United Microelectronics Corp., Science-Based Industrial Park, Hsin-Chu, TW;
Abstract
A SiC region and a source/drain region are formed such that the SiC region includes a first portion overlapping the source/drain region and a second portion protruding from the source/drain region to a position beneath the LDD region. The concentration of crystalline SiC in the second portion is higher than the concentration of crystalline SiC in the first portion. The SiC region may be formed through a normal implantation before the second spacer is formed, or the SiC region may be formed through a tilt implantation or deposition epitaxially in a recess having a sigma-shape like sidewall after the second spacer is formed.