The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 03, 2011
Filed:
May. 11, 2006
Bang-chiang Lan, Taipei, TW;
Chen-hua Tsai, Hsin-Chu Hsien, TW;
Yu-hsin Lin, Tai-Nan, TW;
Tsung-lung Tsai, Tai-Nan, TW;
Cheng-tzung Tsai, Taipei, TW;
Bang-Chiang Lan, Taipei, TW;
Chen-Hua Tsai, Hsin-Chu Hsien, TW;
Yu-Hsin Lin, Tai-Nan, TW;
Tsung-Lung Tsai, Tai-Nan, TW;
Cheng-Tzung Tsai, Taipei, TW;
United Microelectronics Corp., Science-Based Industrial Park, Hsin-Chu, TW;
Abstract
A method of manufacturing a metal oxide semiconductor is provided. The method includes forming an offset spacer and a disposable spacer around the offset spacer. Then, forming a plurality of epitaxial layers outside the disposable spacer and removing the disposable spacer. In addition, the method includes forming a plurality of source/drain extension areas in the substrate outside the offset spacer and the epitaxial layers. Because the source/drain extension areas are formed after the selective epitaxial growth process, the thermal of the selective epitaxial growth process does not damage the source/drain extension areas.