The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 2015
Filed:
Mar. 01, 2011
Chan-lon Yang, Taipei, TW;
Chi-mao Hsu, Tainan, TW;
Chun-yuan Wu, Yunlin County, TW;
Tzyy-ming Cheng, Hsinchu, TW;
Shih-fang Tzou, Hsinchu County, TW;
Chin-fu Lin, Tainan, TW;
Hsin-fu Huang, Tainan, TW;
Min-chuan Tsai, New Taipei, TW;
Chan-Lon Yang, Taipei, TW;
Chi-Mao Hsu, Tainan, TW;
Chun-Yuan Wu, Yunlin County, TW;
Tzyy-Ming Cheng, Hsinchu, TW;
Shih-Fang Tzou, Hsinchu County, TW;
Chin-Fu Lin, Tainan, TW;
Hsin-Fu Huang, Tainan, TW;
Min-Chuan Tsai, New Taipei, TW;
UNITED MICROELECTRONICS CORP., Science-Based Industrial Park, Hsin-Chu, TW;
Abstract
A method for manufacturing a metal gate structure includes providing a substrate having a high-K gate dielectric layer and a bottom barrier layer sequentially formed thereon, forming a work function metal layer on the substrate, and performing an anneal treatment to the work function metal layer in-situ.