The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 03, 2012
Filed:
Mar. 09, 2011
Cheng-yu MA, Tainan, TW;
Wen-han Hung, Kaohsiung, TW;
Ta-kang Lo, Taoyuan County, TW;
Tsai-fu Chen, Hsinchu, TW;
Tzyy-ming Cheng, Hsinchu, TW;
Cheng-Yu Ma, Tainan, TW;
Wen-Han Hung, Kaohsiung, TW;
Ta-Kang Lo, Taoyuan County, TW;
Tsai-Fu Chen, Hsinchu, TW;
Tzyy-Ming Cheng, Hsinchu, TW;
United Microelectronics Corp., Science-Based Industrial Park, Hsin-Chu, TW;
Abstract
A method for forming a transistor having a metal gate is provided. A substrate is provided first. A transistor is formed on the substrate. The transistor includes a high-k gate dielectric layer, an oxygen containing dielectric layer disposed on the high-k gate dielectric layer, and a dummy gate disposed on the oxygen containing dielectric layer. Then, the dummy gate and the patterned gate dielectric layer are removed. Lastly, a metal gate is formed and the metal gate directly contacts the high-k gate oxide.