The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 24, 2024
Filed:
May. 05, 2022
United Microelectronics Corp., Hsinchu, TW;
Chi-Hsiao Chen, Chiayi, TW;
Tzyy-Ming Cheng, Hsinchu, TW;
Wei Jen Chen, Tainan, TW;
Kai Lin Lee, Kinmen County, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
A high electron mobility transistor (HEMT) device including the following components is provided. A gate electrode is located on a barrier layer. A source electrode is located on the first side of the gate electrode. A drain electrode is located on the second side of the gate. A source field plate is connected to the source electrode. The source field plate includes first, second, and third field plate portions. The first field plate portion is connected to the source electrode and is located on the first side of the gate electrode. The second field plate portion is located on the second side of the gate electrode. The third field plate portion is connected to the end of the first field plate portion and the end of the second field plate portion. The source field plate has a first opening located directly above the gate electrode.