Chiayi, Taiwan

Chi-Hsiao Chen


Average Co-Inventor Count = 3.3

ph-index = 1

Forward Citations = 8(Granted Patents)


Company Filing History:


Years Active: 2019-2025

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7 patents (USPTO):Explore Patents

Title: Chi-Hsiao Chen: Innovator in High Electron Mobility Transistors

Introduction

Chi-Hsiao Chen is a prominent inventor based in Chiayi, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the development of high electron mobility transistors (HEMTs). With a total of 7 patents to his name, Chen's work has had a substantial impact on the industry.

Latest Patents

One of Chi-Hsiao Chen's latest patents focuses on a high electron mobility transistor that includes a substrate. The design features a channel layer disposed on the substrate, with an active layer placed on top of the channel layer. This active layer consists of a P-type aluminum gallium nitride layer, and a P-type gallium nitride gate is situated on the active layer. Additionally, a source electrode and a drain electrode are positioned on the active layer, enhancing the functionality of the transistor.

Career Highlights

Chi-Hsiao Chen is currently employed at United Microelectronics Corporation, a leading company in the semiconductor industry. His innovative work in HEMTs has positioned him as a key figure in advancing semiconductor technology.

Collaborations

Throughout his career, Chen has collaborated with notable colleagues, including Kai-Lin Lee and Wei-Jen Chen. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas.

Conclusion

Chi-Hsiao Chen's contributions to the field of high electron mobility transistors exemplify his dedication to innovation in semiconductor technology. His patents and collaborations continue to influence the industry, showcasing the importance of his work.

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