The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 27, 2011
Filed:
Feb. 16, 2007
Shyh-fann Ting, Tai-Nan, TW;
Sheng-hao Lin, Hsin-Chu Hsien, TW;
Chien-hsing Lee, Taipei County, TW;
Da-ching Chiou, Chiayi, TW;
Sun-chin Wei, Tainan County, TW;
Min-yi Chang, Tainan, TW;
Cheng-tung Huang, Kao-Hsiung, TW;
Tung-hsing Lee, Hsin-Chu, TW;
Tzyy-ming Cheng, Hsin-Chu, TW;
Shyh-Fann Ting, Tai-Nan, TW;
Sheng-Hao Lin, Hsin-Chu Hsien, TW;
Chien-Hsing Lee, Taipei County, TW;
Da-Ching Chiou, Chiayi, TW;
Sun-Chin Wei, Tainan County, TW;
Min-Yi Chang, Tainan, TW;
Cheng-Tung Huang, Kao-Hsiung, TW;
Tung-Hsing Lee, Hsin-Chu, TW;
Tzyy-Ming Cheng, Hsin-Chu, TW;
United Microelectronics Corp., Science-Based Industrial Park, Hsin-Chu, TW;
Abstract
A testkey design pattern includes a least one conductive contact, at least one conductive line of a first width vertically and electrically connected to the conductive contact, and at least one pair of source and drain respectively directly connected to each side of the conductive line. The pair of source and drain and part of the conductive line of a first length directly connected to the source and drain form an electronic device. The testkey design patterns are advantageous in measuring capacitance with less error and for better gate oxide thickness extraction.