Location History:
- Chupei, TW (2001)
- Hsinchu Hsien, TW (2001)
- Taipei County, TW (2011)
Company Filing History:
Years Active: 2001-2011
Title: Innovations of Chien-Hsing Lee
Introduction
Chien-Hsing Lee is a prominent inventor based in Taipei County, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of 4 patents. His work focuses on enhancing the performance and reliability of electronic devices.
Latest Patents
One of his latest patents is a testkey design pattern for gate oxide. This design includes at least one conductive contact and a conductive line of a first width that is vertically and electrically connected to the conductive contact. The design also features a pair of source and drain connected to each side of the conductive line. This innovation is advantageous for measuring capacitance with reduced error and improving gate oxide thickness extraction.
Another notable patent is a fabrication method for a flash memory device. This method involves forming a plurality of gate structures on a substrate, each with a gate oxide layer. A floating gate is created on the gate oxide layer, followed by the formation of a cap layer and a spacer. The process includes forming a trench and establishing source and drain regions in the substrate. This method enhances the efficiency of flash memory device fabrication.
Career Highlights
Chien-Hsing Lee is currently employed at United Microelectronics Corporation, a leading company in the semiconductor industry. His work has been instrumental in advancing technologies that are critical for modern electronic devices.
Collaborations
He has collaborated with notable coworkers such as Shyh-Fann Ting and Sheng-Hao Lin, contributing to various innovative projects within the company.
Conclusion
Chien-Hsing Lee's contributions to semiconductor technology through his patents and work at United Microelectronics Corporation highlight his role as a key innovator in the field. His inventions continue to influence the development of advanced electronic devices.