The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 17, 2001
Filed:
Mar. 24, 2000
Applicant:
Inventor:
Chien-Hsing Lee, Hsinchu Hsien, TW;
Assignee:
United Microelectronics Corp., Hsinchu, TW;
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/9788 ;
U.S. Cl.
CPC ...
H01L 2/9788 ;
Abstract
A flash memory device is described. A gate oxide layer is situated on a substrate next to a trench and a floating gate is located on the gate oxide layer. A source region is located in the substrate at the bottom of the trench and a drain region is located on a side of the floating gate. A dielectric layer is on the floating gate, the gate oxide layer and the trench. A control gate is located on the dielectric layer.