The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 13, 2001
Filed:
Mar. 24, 2000
Chien-Hsing Lee, Chupei, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
A method for fabricating a flash memory device is described. A plurality of gates structures are formed on a substrate and each gate structure has a gate oxide layer. A floating gate is formed on the gate oxide layer. A cap layer is formed on the floating gate, and a spacer is formed on the sidewalls of the cap layer, the floating gate and the gate oxide layer. Thereafter, a trench is formed in every other space between the gate structures. A source region is formed on one side of the gate structure at the bottom of the trench in the substrate. Concurrently, a drain region is formed on another side of the gate structure in the substrate. After this, the cap layer and the spacer are removed, followed by forming a conformal dielectric layer on the substrate. A conductive layer is further formed on the substrate.